Title page for etd-1027111-140652


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URN etd-1027111-140652
Author Cho-Han Fan
Author's Email Address No Public.
Statistics This thesis had been viewed 5351 times. Download 980 times.
Department Electrical Engineering
Year 2011
Semester 1
Degree Ph.D.
Type of Document
Language English
Title Study of Titanium Oxide and Nickel Oxide Films by Liquid Phase Deposition
Date of Defense 2011-10-21
Page Count 124
Keyword
  • nickel oxide
  • Titanium dioxide
  • high dielectric constant
  • MOS structure
  • liquid phase deposition
  • Nickel-doped
  • Abstract An uniform titanium oxide film was grown on indium tin oxide/glass substrate with the aqueous solutions of ammonium hexafluoro-titanate and boric acid. The as-deposition titanium oxide film shows good electrochromic property because of fluorine passivation on defects and dangling bonds. The transmittance of as-grown titanium oxide on indium tin oxide/glass with a thickness of 270 nm is about 85% at the wavelength of 550 nm. By 50 times electrochromic cycling test, the transparency ratio of TiO2 film is kept at 45% between fully colored state and fully bleached state at the wavelength of 550 nm.
      Under ultraviolet illumination, the growth of titanium oxide film grown is enhanced. The root mean squared value of surface roughness is improved from 3.723 to 0.523 nm. Higher fluorine concentration from (NH4)2TiF6 passivate defects and dangling bonds of titanium oxide during the growth. After 50 times electrochromic cycling test, the transparency ratio UV-TiO2 is improved from 37.5% to 42.4% at the wavelength of 550 nm.
      The electrical characteristics of nickel-doped titanium oxide films on p-type (100) silicon substrate by liquid phase deposition were investigated. For nickel doping, the nickel chloride was used as the doping solution and the electrical characteristics were improved. After thermal annealing in nitrous oxide at 700 oC, the dielectric constant of polycrystalline titanium oxide film is 29 and can be improved to 94 with nickel doping.
      Uniform nickel oxide film was grown on a conducting glass substrate with the aqueous solution of saturated NiF2•4H2O solution and H3BO3. The quality of NiO is improved after thermal annealing at 300 oC in air from the decrease of oxygen vacancy and better F ion passivation on defects and dangling bonds. The transmittance of as-deposited NiO/ITO/glass with a thickness of 100 nm is about 78% and improved to 88% after annealing at the wavelength of 550 nm. By the electrochromic cycling test 50 times on annealed NiO film, the transparency ratio is kept at 48% between fully colored state and fully bleached state at the wavelength of 550 nm. By the memory time test, the annealed LPD-NiO film has shorter memory time.
      The growth of nickel oxide film grown on indium-tin oxide/glass substrate by liquid phase deposition is enhanced under ultraviolet photo-irradiation was studied. a-Ni(OH)2 dominates the composition of as-grown NiO film. After thermal treatment at 300 oC,a-Ni(OH)2 is transformed into NiO. For thermally treated NiO under ultraviolet photo-irradiation, the recrystallization and the colored and bleached transmittance after 50 times electrochromic test were improved. Both improvements come from fluorine passivation.
    Transparent and conductive thin films consisting of p-type nickel oxide (NiO) semiconductors were prepared by liquid phase deposition. A resistivity of 8 x 10-1 -cm was obtained for NiO films prepared at liquid phase deposition. The transmittance of NiO is almost 70 % in the 550 nm wavelength was obtained for a 384.3 nm thick NiO film.
    Advisory Committee
  • Kuang-Chih Huang - chair
  • Wen-Tai Lin - co-chair
  • Su-Hua Yang - co-chair
  • Min-Yan Ye - co-chair
  • Ming-Kwei Lee - advisor
  • Files
  • etd-1027111-140652.pdf
  • Indicate in-campus at 1 year and off-campus access at 1 year.
    Date of Submission 2011-10-27

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