||In this thesis, epitaxial (0001) ZnO films were grown by chemical vapor deposition (CVD) method on LiGaO2 (LGO) (001) substrate. Zinc Acetylacetonate was used as precursor. High purity oxygen and nitrogen were used as reaction gas and carrier gas, respectively|
After CVD reaction, we utilized x-ray diffractometer, scanning electron microscope, photoluminescence spectroscope, atomic force microscope, Raman Spectroscope and Transmission Electron Microscope to analyze ZnO films characteristics such as crystal structure, crystal quality, surface morphology, optical properties, residual stress, surface roughness and micro-structure properties.
The experiment has four parts. First, the dependence of growth characteristics of different growth pressures were investigated. Second, ZnO films growth under various temperatures were investigated. In the third part, the dependence of growth characteristics in different oxygen partial pressures were investigated. In last part, the dependence of ZnO film growth time were investigated.
To ensure the experimental process can be precisely controlled. Experimental method was modified by utilizing "mobile quartz boat" device. From sample analysis, we found that the ZnO films have excellent epitaxial quality. The crystallinity, surface roughness and optical properties were also improved by AFM and PL evidently.