Title page for etd-1009107-124006


[Back to Results | New Search]

URN etd-1009107-124006
Author Hung-Chang Lee
Author's Email Address eex@mail.nsysu.edu.tw
Statistics This thesis had been viewed 5531 times. Download 20 times.
Department Electrical Engineering
Year 2007
Semester 1
Degree Ph.D.
Type of Document
Language English
Title Characterization of Titanium Oxide as Gate Oxides on Polycrystalline Silicon and Amorphous Silicon Thin Film Transistors
Date of Defense 2007-09-21
Page Count 167
Keyword
  • TFT
  • TiO2
  • a-Si
  • poly-Si
  • MOCVD
  • LPD
  • Abstract The purpose of this study is using titanium dioxide (TiO2) as gate oxide on thin film transistor (TFT) and discussed with their physical, chemical and electrical properties. Amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) are used as substrates. The metal-organic chemical vapor deposition (MOCVD) and the liquid phase deposition (LPD) are used as the TiO2 growth methods. About the LPD growth method, ammonium hexafluoro-titanate ((NH4)2TiF6) and hexafluorotitanic acid (H2TiF6) are used as Ti sources. We are interested in two parts: (1) the growth mechanisms, physics properties, chemical properties and electrical properties of MOS structure; (2) the fabrication processes and electrical properties of devices.
    In the first part, we discuss the thin films characteristics on a-Si and poly-Si substrates. For the MOCVD growth method, the MOCVD-TiO2 film tends to form the poly structure. Poly structure has a higher dielectric constant, however, higher traps and dangling bonds also exist at the grain boundaries. Thus, poly structure of TiO2 film has a higher leakage current. For the LPD growth method, the film tends to form the amorphous structure. Amorphous structure has lower leakage current but also has lower dielectric constant. The film that grown from the (NH)2TiF6 source is called LPD-TiO2 film. The film that grown from the (NH)2TiF6 source is called LPD-TixSi(1-x)Oy film. Both films are incorporated with OH and F ions during the growth, the OH and F ions can be outgassed during the low temperature annealing process. In addition, appropriate F ions in the film can passivate the traps and dangling bonds. The low temperature treatments in N2 or O2 ambient and post-metallization annealing (PMA) are adopted to improve the film characteristics. On the other hand, the substrate is not a prefect structure (not a single structure). Thus the film may be influenced by substrate during the annealing treatment.
    In the second part, the electrical properties of TFT devices were discussed under the coplanar structure. There are several differences of the operation principle in TFT and MOSFET. A-Si and poly-Si are the un-doped substrates with many traps in the bulk. The channel should be occurred through the full depletion mode. The full depletion region is the substrate that under the gate electrode. Thus, the key point is kept the suitable thickness. Too thick, the channel can not appear. Too thin, the substrate may be over-etched. For ion implantation, due to the thinner active layer, the ion implantation energy should be lowed. In addition, the activation temperature and activation time should be adjusted suitable. We have fabricated the TFT devices with the MOCVD-TiO2 as gate oxide on poly-Si substrate. From the I-V characteristics, the Kink effect can be observed. However, the Ion/Ioff ratio is still low. We must further study how to increase the Ion/Ioff ratio.
    Advisory Committee
  • Kuo-Mei Chen - chair
  • Chung-Cheng Chang - co-chair
  • Tsu-Hsin Chang - co-chair
  • Jen-Sue Chen - co-chair
  • Jeng Gong - co-chair
  • Ming-Kwei Lee - advisor
  • Files
  • etd-1009107-124006.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2007-10-09

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys