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URN etd-1008113-000248
Author Chu-An Lee
Author's Email Address d983100006@student.nsysu.edu.tw
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Department Materials and Optoelectronic Science
Year 2013
Semester 1
Degree Ph.D.
Type of Document
Language zh-TW.Big5 Chinese
Title Growth and characterization of nonpolar InN epitaxial films on LiGaO2 substrates by hydride vapor phase epitaxy
Date of Defense 2013-10-28
Page Count 238
Keyword
  • epitaxy
  • nonpolar
  • Cz
  • HVPE
  • LGO
  • InN
  • Abstract The purpose of this work was to grow the nonpolar InN by HVPE and to find the process to increase the crystal properties of the as-grown nonpolar InN epitaxial films. The substrates used in the nonpolar InN growth in this work were LGO (β-LiGaO2) single crystals which were grown by Czochralski pulling technique. Spiral growth, black color, and cracks were the main problems. The black color could be removed by adjusting the atmosphere in the growth condition. With the proper adjustment of the temperature gradient, the cracks could be reduced completely. The spiral growth could be eliminated by doping a small amount of specific impurities. Finally, a crack-free and epitaxy-level LGO single crystal with 60 mm in diameter and 150 mm in length was grown successfully. The FWHM values of XRCs of the as-grown LGO were 53.64 sec-1, 41.40 sec-1, and 48.24 sec-1 at (100), (010), and (001) plane. Nonpolar M-InN and A-InN single crystal films were grown on LGO substrates by HVPE successfully. The source materials were In metal, HCl gas, and NH3 gas and mixed by a specific mixed chamber which was very different from the chamber used in GaN-HVPE. The growth rate was 0.3 μm/hr. The epitaxial relationship between InN and LGO was [10-10]InN // [100]LGO and [11-20] InN //[0-10]LGO. The optimal FWHM values of XRC of M-InN and A-InN were 32.6 min-1 and 58.9 min-1 respectively. The surfaces of the as-grown nonpolar InN were very smooth. The RMS roughness of M-InN and A-InN were 1.758 and 2.355 nm respectively. Raman analysis results indicated that these nonpolar InN films on LGO were under compressive stress. The room temperature CL analysis results indicated that the band gap of the as-grown nonpolar InN was located at 0.6~ 0.65 eV, but the defect emission was also observed. The defect emission could be reduced by increasing the NH3 flow in HVPE growth.
    Advisory Committee
  • Liuwen Chang - chair
  • Li-Wei Tu - co-chair
  • Da-Ren Hang - co-chair
  • Pouyan Shen - co-chair
  • Der shin Gan - co-chair
  • Cheng-Huang Kuo - co-chair
  • Mitch M.C. Chou - advisor
  • Files
  • etd-1008113-000248.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2013-11-08

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