Title page for etd-1008108-032911


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URN etd-1008108-032911
Author Hsuan-Hsiang Su
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2008
Semester 1
Degree Master
Type of Document
Language English
Title Improvement on low-temperature deposited high-k materials by high-pressure treatment
Date of Defense 2008-10-02
Page Count 58
Keyword
  • high-pressure
  • high-k
  • HfO2
  • ZrO2
  • Abstract In this study, high-pressure oxygen (O2 and O3) technologies were employed originally to effectively improve the properties of low-temperature-deposited metal oxide dielectric films. In this work, 5 nm ultra-thin HfO2 and ZrO2 films were deposited by sputtering method at room temperature. Then, the low temperature high-pressure oxygen treatments at 150 °C were used to replace the conventional high temperature annealing for HfO2 and ZrO2 improvement. From the experimental results, O3 produced by UV light illumination in O2 ambient has the superior passivation ability than O2, and it can further suppress leakage current density and improve capacitance characteristics.
    According to the XPS analyses, the absorption peaks of Hf-O and Zr-O bonding energies apparently raise and the quantity of oxygen in HfO2 and ZrO2 film also increases from XPS measurement. In addition, both the leakage current density of 5nm HfO2 and ZrO2 film can be improved to 10-8 A/cm2 at |Vg| = 3 V, and the conduction mechanisms were transferred from trap-assisted tunneling to thermal emission because of the significantly reduction of defects.
    All the experiment processes in this study, the temperatures were controlled below 150 °C. The proposed low-temperature and high pressure O2 or O3 treatment for improving high-k dielectric films is novel and applicable for the future flexible electronics.
    Advisory Committee
  • Ting-Chang Chang - chair
  • Mei-Ying Chang - co-chair
  • An-Kuo Chu - co-chair
  • Yan-Kuin Su - advisor
  • Files
  • etd-1008108-032911.pdf
  • indicate access worldwide
    Date of Submission 2008-10-08

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