Title page for etd-0913116-111333


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URN etd-0913116-111333
Author Chen-yueh Yang
Author's Email Address No Public.
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Department Electrical Engineering
Year 2016
Semester 1
Degree Master
Type of Document
Language English
Title Characterization of Lateral Bipolar Transistor in 180nm and 350nm CMOS for a Biosignal Acquisition Stage
Date of Defense 2016-10-06
Page Count 98
Keyword
  • ASIC
  • Low noise
  • Biomedical signal
  • Flicker noise
  • Lateral Bipolar Transistor
  • Abstract Technologies and applications of biomedical signals processing become increasingly popular as integrated circuit fabrication technology and process advances, a low interference input stage in a recording circuit is very important for recording bio-signals such as electrocardiogram (ECG) and electromyogram (EMG) while the amplitude is only few millivolts or less. If the circuit cannot reject noise effectively, it is hard to amplify the bio-signal and obtain the output voltage of the recording system accurately. This thesis is focused on the measurement of several candidates of bipolar devices to be used in a differential input stage. We characterize lateral bipolar transistors in TSMC 180nm and 350nm CMOS technologies. We realized four different layout types of lateral BJT in TSMC D35 CMOS process and one type in TSMC T18 CMOS process for testing. Devices fabricated in conventional multi-project wafer runs have been measured to determine their low-frequency parameters, including transconductance, input resistance, current gain, turn-on voltage, offset and noise. It is observed that all the BJTs examined to provide a very low flicker-noise corner. The results further show that circular designs do not provide the significant advantage over using the simpler square layout. The metal may be used to cover the base area instead of using polysilicon without significantly affecting the device performance.
    Advisory Committee
  • Tsang-Ling Sheu - chair
  • Tong-Yu Hsieh - co-chair
  • Ko-Chi Kuo - co-chair
  • Robert Rieger - advisor
  • Files
  • etd-0913116-111333.pdf
  • Indicate in-campus at 0 year and off-campus access at 1 year.
    Date of Submission 2016-10-13

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