Title page for etd-0912112-161454


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URN etd-0912112-161454
Author Jiun-jie Lin
Author's Email Address No Public.
Statistics This thesis had been viewed 5384 times. Download 1276 times.
Department Physics
Year 2011
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Effects of fabrication processes on the electrical properties of n-ZnO/AlxSi(1-x)Oy/p-Si pin diodes
Date of Defense 2012-07-10
Page Count 49
Keyword
  • pin diode
  • ZnO
  • sputtering
  • Al2O3
  • Abstract In this thesis, n-type ZnO thin films are grown on buffered p-type Si substrates by RF sputtering. The buffer is a pure nanometer-thick Al layer deposited onto a Si substrate that has a native SiOx over-layer. The Al- layer is meant to react with the native oxide and reduce it back to the pure Si formation when the Al-layer is itself oxidized into AlOx. The pin diodes with ZnO grown on AlOx are expected to outperform those with ZnO on SiOx on the aspects of electrical quality and crystallographic
    orientations.
     The transmission electron microscopy was employed to study the epitaxial relationship between the ZnO layers and the Si substrates, the crystal structure, and defects at the ZnO-Al or Al-SiOx interfaces. X-ray diffraction studies through ω-2θ, rocking curve, GIXRD and pole-figure scans were also conducted to see the differences between as-deposited and post-annealing treated samples concerning with the ZnO crystallographic orientations and general qualities. Through comparisons of the leakage current and the tunneling behaviors , the electrical
    measurements can be used to analyze the pin devices.
    Advisory Committee
  • Der-Jun Jang - chair
  • Chih-Hsiung Liao - co-chair
  • Li-Wei Tu - co-chair
  • Yung-Sung Chen - advisor
  • Files
  • etd-0912112-161454.pdf
  • Indicate in-campus at 3 year and off-campus access at 5 year.
    Date of Submission 2012-09-12

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