||In this study, we study the annealing effect of Bi0.9Pb0.1FeO3 bulk in various time span and the various growth conditions of Bi0.9Pb0.1FeO3 thin film to physical proporties, such as crystal structure, surface amorphous, delectric properties. With these effort, this study wish to find a better growth condition for Bi0.9Pb0.1FeO3 film that exhibit the best ferroelectric property, and to understant the possible mechanism underlaying the growth conditions to the physical properties.|
It is found that the doping of Pb in Bi0.9Pb0.1FeO3 compound does stabalize the formation of single phase Bi0.9Pb0.1FeO3 ,however, this stabalization can only postpone the decay of Bi0.9Pb0.1FeO3 properties when is annealed in a long period of time. The crystal strucutre of Bi0.9Pb0.1FeO3 is very close to a pseudocubic structure in which oxgyen sites locate noncenter-symmetrically that generates a stronge electric polariztion. The various growth conditions has a very stong influence to the physical properties of Bi0.9Pb0.1FeO3 thin films. For those films grwon at 700oC exibits the best delectricity. The grain size of films grows as grwoth time as resutl of this the thicker the film thelarger the grain size. The electric hysterises property measured by PFM is observed for grain itself, however, the grain boundaries where accumulates many possible defects exhibits a large electric leakage therefore no saturated polarization is observed if a large area of electrode is used.