||With the combination of ferroelectric, ferromagnetic and the mutual coupling properties, multiferroics attracts a lot of researcher's attentions recently. Among of which BiFeO3 has caught extensive attention for it manifests multiferroic effects above the room temperature. However, the instability of Bi serious electric leakage is the major drawback. From early study in our group, it was found the Pb doping at Bi sites could stabilize Bi1-xPbxFeO3 phase . In this research Bi1-xPbxFeO3 compound is, then, used to grow films. The goal of this thesis is to understand how the grown conditions and their mechanism in affecting the properties of films.|
Bi0.9Pb0.1FeO3 target was formed by a solid state reaction method,Bi0.9Pb0.1FeO3 films were deposited by RF sputtering system on top of the SrRuO3 thin film which was pre-grown on the SrTiO3 (001) substrate as a conducting layer.
It is found that the relative position between target and substrate is important for film growth. By analizing the AFM, XRD and EDS data, the grain sizes, the length of c-axis and the content of films are dependent on the growth temperature.