Title page for etd-0907111-162128


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URN etd-0907111-162128
Author Chien-pin Lu
Author's Email Address No Public.
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Department Materials and Optoelectronic Science
Year 2011
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Effect of nanosized buffer layer and processing parameters on epitaxial growth of ZnO on LiAlO2 by chemical vapor deposition
Date of Defense 2011-08-16
Page Count 150
Keyword
  • buffer layer
  • heterogeneous epitaxy
  • nonpolar ZnO
  • LiAlO2
  • chemical vapor deposition
  • Abstract Zinc Oxide (ZnO) has great potential for applications on ultraviolet/blue light emitting devices because of high exciton binding energy and low cost. This research use low lattice-mismatched γ-LiAlO2 (LAO) substrate to grow ZnO epitaxial films by chemical vapor deposition (CVD). The first part of the present study deals with effect of processing parameters including temperature of Zinc procuser, sample position and growth temperature on ZnO epilayer. High the precuser temperature and long distance between sample and center of CVD furnace resulted in high growth rates. When growth rate was low, (10 0) ZnO (m-ZnO) was obtained and its crystallinity and luminescence property were poor. After increasing the growth rate to a certain extent, the surface of epilayer was flat and the crystallinity was improved. A further increase of growth rate resulted in a mixture of m-ZnO and c-plane in the ZnO epilayer. Based on the first part of study, the second part was focused on examining the effect of a nanosized buffer layer on inhibiting the nucleation of c-plane ZnO. Results showed that the nucleation of c-plane ZnO was indeed inhibited at low growth temperature. Finally, the crystallinity the optical property of the epilayer were improved by introducing
    a thick and flat buffer layer of ~170 nm in thickness.
    Advisory Committee
  • Der-Shin Gan - chair
  • Mitch M.C. Chou - co-chair
  • Liu-wen Chang - advisor
  • Files
  • etd-0907111-162128.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2011-09-07

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