Title page for etd-0907109-113605


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URN etd-0907109-113605
Author Cheng-Hua Li
Author's Email Address No Public.
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Department Mechanical and Electro-Mechanical Engineering
Year 2008
Semester 2
Degree Master
Type of Document
Language English
Title The Effects of Heat Treatments on Zinc Nitride Thin Films and the PN Junction Characterization
Date of Defense 2009-05-13
Page Count 46
Keyword
  • zinc nitride
  • heat treatment
  • reactive sputtering
  • p-n junction
  • Abstract There are many intensive researches for zinc compounds due to their wide band gaps and potential applications in visible and UV optoelectronic technologies. Zinc nitride is a n-type semiconductor material having a direct band gap, and is not widely studied. Previous papers reported that zinc nitride is a n-type semiconductor having low resistivity and high electron mobility. Its band gap varies from 1.23 eV to 3.2 eV depending on the process condition. In this work, we successfully fabricated zinc nitride p-n junction by heat treatment on zinc nitride films. The threshold voltage of p-n junction is about 1 V. The Zinc nitride films were prepared by reactive RF magnetron sputtering. The as-grown zinc nitride thin film is a n-type material. It is found that the film treated at 300℃ for 3 hours can be changed to a p-type material. The zinc nitride has a very low resistance (2.2×10-2 Ω-cm) and high carrier concentration (3.88×1019 cm-3) after the heat treatment. The optical band gap of zinc nitride was determined as a direct band gap varying from 1.1 eV to 1.6 eV according to the temperature of heat treatment. The zinc nitride was successfully prepared with various electrical characteristics and band gaps by controlling the temperature of heat treatment.
    Advisory Committee
  • Chien-Hsiang Chao - chair
  • Ting-Chang Chang - co-chair
  • Tsung-Ming Tsai - co-chair
  • Tai-Fa Young - advisor
  • Files
  • etd-0907109-113605.pdf
  • indicate accessible in a year
    Date of Submission 2009-09-07

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