Title page for etd-0905108-172949


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URN etd-0905108-172949
Author Cheng-hsun Liu
Author's Email Address No Public.
Statistics This thesis had been viewed 5388 times. Download 28 times.
Department Physics
Year 2007
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Anomalous Hall Effect of InN
Date of Defense 2008-06-16
Page Count 51
Keyword
  • GALVANOMAGNETIC
  • 2DEG
  • InN
  • Anomalous Hall Effect
  • Magnetoresistance
  • Abstract The electrical conductivity of InN, group III-V semiconductor, is measured by four point measurement at low temperatures and high magnetic fields. From Resistance Vs temperature measurements (done in the absence of magnetic field) there is a transition from semiconducting state to superconducting state at 2.5K. This superconducting state disappears when the measurements are repeated but at a magnetic field of 0.1 Tesla. Mover the Hall voltage is not proportional to the magnetic field.
    Advisory Committee
  • Li-wei Tu - chair
  • none - co-chair
  • Chien-cheng Kuo - advisor
  • Yung-sung Chen - advisor
  • Files
  • etd-0905108-172949.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2008-09-05

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