Title page for etd-0831109-204106


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URN etd-0831109-204106
Author Jung-hsiang Chen
Author's Email Address No Public.
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Department Physics
Year 2008
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The Electrical Analysis and Reliability Study of
Power MOSFET Given External Mechanical Strain
Date of Defense 2009-06-09
Page Count 79
Keyword
  • POWER-MOSFET
  • Breakdown Voltage
  • Reliability
  • Abstract Abstract
     
    The tendency to manufacture of semiconductor is to minimize the size of device. With the size was minimized, the number of transistor on the chip was maximized at the same time .However, when the drift region of Power-MOSFET is shorter will result in the Breakdown Voltage is lower, so this do not conform our purpose for application, and therefore we should look for some alternative method to enhance efficiency.
    One of these method of efficiency promotion is adopting channel strain. We adopt bending silicon substrate to obtain strain. By using this method, we successfully enhance drain current and mobility 12.1% and 4.1% individually.
    Furthermore, regarding the reliability study, we realize the hot-carrier effect influence under strain silicon. The longer the size(Lg & DL) of Power- MOSFET , the reliability is better. When device were bent under Bending R=40mm and Lg=0.8(m conditions, we can obtain the better reliability of device than flat chip.
    Advisory Committee
  • Ann-Kuo Chu - chair
  • Wen-Yao Huang - co-chair
  • Ting-Chang Chang - advisor
  • Files
  • etd-0831109-204106.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2009-08-31

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