Title page for etd-0830112-163521


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URN etd-0830112-163521
Author Ling-Yu Tseng
Author's Email Address No Public.
Statistics This thesis had been viewed 5571 times. Download 563 times.
Department Electro-Optical Engineering
Year 2011
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Sputtered SiO2 Enhance Quantum Well Intermixing for Integration of Electroabsorption Modulators and Semiconductor Optical Amplifiers
Date of Defense 2012-07-18
Page Count 57
Keyword
  • Bandgap engineering
  • Quantum Well Intermixing
  • Impurity Free Vacancy Diffusion
  • SiO2
  • Si3N4
  • Stress
  • Abstract   In this work, a quantum well intermixing(QWI) technology, called impurity free vacancy diffusion(IFVD), is used to do the bandgap engineering in an optoelectronic monolithic integration. The monolithic integration of SOAs and EAMs is taken as an example. By IFVD, the transition energy levels of EAM quantum wells can be shifted to shorter wavelength region, while SOA quantum wells are kept the same. Therefore, the overall SOA-integrated EAM efficiency can be improved.
      We use dielectric film—SiO2 and Si3N4 to control the impurity free vacancy diffusion, both of these two dielectric layer will induce stress on the wafer, but they will come to the totally different result base on the difference atom chemistry with the substrate. Using Ga atom diffusion into SiO2 to relax stress, the IFVD will be operated to enhance quantum well intermixing, leading to energy bang transition change. On the other hand, with Si3N4 film, no significant intermixing is observed, implying atom chemistry dominates the whole process. Also, a super critical fluid technique by H2O2 is also employed to further improving SiO2 quality, a as large as 180nm blue shift is obtained, further improving such mechanism. Through difference properties between SiO2 and Si3N4 dielectric layers, different bandgap transitions in one single chip can be controlled in an area of 30μm×50μm, leading to a planar bandgap engineering. Use these techniques, an EAM-SOA integration is designed and fabricated, obtaining an wavelength offset of 40nm with good quality of material structure. In the future, we can use this technique on large scale chip, tuning the bandgap to make photonic integration circuit without re-growth.
    Advisory Committee
  • Ann-Kuo Chu - chair
  • Chao-Kuei Lee - co-chair
  • Wei-Hung Su - co-chair
  • Yi-Jen Chiu - advisor
  • Files
  • etd-0830112-163521.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2012-08-30

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