Title page for etd-0825117-125541


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URN etd-0825117-125541
Author Che-Hsin Liang
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2017
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Hybrid Heterogeneously Integrated Optical Waveguide by Ultra-thin DVS-BCB Adhesive Bonding of III-V/Silicon using Selective Dry Etching
Date of Defense 2017-09-15
Page Count 62
Keyword
  • self-alignment technology
  • spot size converter
  • selective dry etch technology
  • heterogeneous integration
  • wafer bonding
  • Abstract Nowadays, three-dimensional integrated circuit (3-D IC) plays an important role in integrated circuit and optic communication for low loss transmission and bulk shrinking. We use advanced CMOS processing and active devices’ integration in III-V materials for heterogeneous integration. However, the connection of layer-to-layer and materials structure processing are extremely important. We adopt high selective dry etch and self-alignment technology for light transformation between different materials in submicron-scale waveguides for the sake of making others optical devices and the use of low-loss transmission.
       In this paper, we combine III-V materials with quantum well and silicon on insulator (SOI) by wafer bonding. Through building quantum well and silicon to be an active layer, we make hybrid nanoscale waveguides and use dry etch with CF4/O2 mixture to achieve selective and clean waveguide processing for mode confined structures. We bond III-V materials and SOI with diluted BCB. In III-V waveguide, we design tapered structure to achieve reflective index matching between III-V waveguide and silicon waveguide for resonant coupling. We input light into silicon waveguide and successfully observe the mode field coupled to III-V waveguide, achieving the connection of layer-to-layer.
    Advisory Committee
  • Wei Lin - chair
  • Chao-Kuei Lee - co-chair
  • Yung-Jr Hung - co-chair
  • Yi-Jen Chiu - advisor
  • Files
  • etd-0825117-125541.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2017-10-17

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