Title page for etd-0825109-173441


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URN etd-0825109-173441
Author Bo-chun Chen
Author's Email Address No Public.
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Department Physics
Year 2008
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The Study of Recrystallization for Amorphous ZnO:Al Thin Film by Laser Annealing
Date of Defense 2009-07-31
Page Count 91
Keyword
  • Amorphous
  • Laser Annealing
  • ZnO:Al
  • Abstract The goal of this paper is to study the mechanism that may lead to the change of physic properties by annealed amorphous AZO samples, that were grown by RF magnetron sputtering, by an excimer laser or a tube furnace or both. By using of the Taguchi Methods, which is in expected to be a fast and efficiency method, to search the best process parameters and to understand what mechanism stood behind the change of these parameters.
    We found that polycrystalline AZO films may be formed very easily when were grown at a temperature higher than 150K. Amorphous AZO films may grow successfully only at low growth temperature, ~77K. Annealing in tube furnace can alter the crystalline properties. Recrystalization starts at 325oC. Laser annealing will also recrystalize the amorphous AZO films with laser energy density higher than 160mj/cm2. Unfortunately, neither method provide enough improvement in the electric conductivity.
    Advisory Committee
  • Ying-Chung Chen - chair
  • Shih-Jye Sun - co-chair
  • Hsiung Chou - advisor
  • Files
  • etd-0825109-173441.pdf
  • indicate in-campus access in a year and off_campus not accessible
    Date of Submission 2009-08-25

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