Title page for etd-0824111-120559


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URN etd-0824111-120559
Author Yu-Jyun Chen
Author's Email Address No Public.
Statistics This thesis had been viewed 5565 times. Download 835 times.
Department Electro-Optical Engineering
Year 2010
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The study of organic solar cell featuring hole transporting layer with rubbing process
Date of Defense 2011-07-12
Page Count 102
Keyword
  • Organic solar cell
  • Rubbing
  • PEDOT:PSS
  • Hole transporting layer
  • Abstract In organic solar cell, the surface characteristic plays an important role in the power conversion efficiency of solar cell device. According to the literatures, the increased roughness can increase the contact area at the interface between PEDOT:PSS and active layer, improving hole extraction to the anode. Furthermore, a rough interface may cause a scattering effect on the incident light, which can reflect the out-lost-light back into the active layer and leads an efficient light absorbed. There are many ways to change the morphology of hole transporting layer, such as solvent-treated, or additives adding. However, the above process methods are easily affected by the external environmental conditions. It’s difficult to get the surface morphology been well controlled, resulting in a process instability and low reproducibility.
    In this research, we will create regular grooves on hole transporting layer by rubbing method. By changing baking temperature and rubbing pressure adjustment of PEDOT:PSS layer; we can precisely control the groove depth and surface morphology. This method makes the process simple and high stability. We found that the PEDOT:PSS hole transporting layer with a suitable depth grooves can enhance the power conversion efficiency. The power conversion efficiency of samples were measured under AM 1.5G 100mW/cm2 illumination. In our results, we found that the device possess about 14.52nm-depth of groove structure, the power conversion efficiency of devices can be increased from 2.03% to 2.36% (which is 17.6% improved). This consequence can be attributed to a short current density increasing from 5.67mA/cm2 to 6.67mA/cm2 based on the device structure is ITO(1500Å)/Rubbing-PEDOT:PSS(500Å)/P3HT:PCBM(800Å)/Al(2000Å).
    Advisory Committee
  • Ko-Shan Ho - chair
  • Chih-Chien Lee - co-chair
  • Yu-Kai Han - co-chair
  • Ping-Tsung Huang - co-chair
  • Mei-Ying Chang - advisor
  • Files
  • etd-0824111-120559.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2011-08-24

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