Title page for etd-0824111-010812


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URN etd-0824111-010812
Author Rui-Ren Chen
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2010
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Semiconductor Laser using Sputtered SiO2 and Quantum Well Intermixing
Date of Defense 2011-07-11
Page Count 66
Keyword
  • quantum well intermixing(QWI)
  • bandgap
  • thermal expansion coefficient
  • stress
  • impurity free vacancy diffusion(IFVD)
  • Abstract In this work , impurity free vacancy diffusion (IFVD) quantum well intermixing(QWI) technology by high thermal-expansion-induced stress is used to perform bandgap engineering. In this paper, 1530nm InGaAsP
    multiple QWs sandwiched by p-InP (2μm thickeneess, top) and n-InP (bottom) material is used as testing material structure also laser fabrication material, where contact materials (InGaAs and InP) on p-InP
    are used for comparison. By the difference between thermal expansion coefficients of SiO2 on the different material (InGaAs, InP), large different behaviors of QWI are observed, while low different dependence on defects created by ion-implantation is found. Above 70nm photo luminance (PL) wavelength shift of InGaAsP MQW below 2μm thick InP is realized in this method. Further more, CW in-plane laser structures are also successfully fabricated and demonstrated by such QWI, giving the same shift as PL. It shows that good qualify of material can be obtained in such QWI method. Using local deposition of SiO2 causes different bandgap materials, re-growth free processing for monolithic integration can be expected, offering a powerful scheme of QWI for bandgap
    engineering.
    Advisory Committee
  • Ann-Kuo Chu - chair
  • Chin-Ping Yu - co-chair
  • Chao-Kuei Lee - co-chair
  • Yi-Jen Chiu - advisor
  • Files
  • etd-0824111-010812.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2011-08-24

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