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URN	etd-0824111-010812
Author	Rui-Ren Chen
Author's Email Address	No Public.
Statistics	This thesis had been viewed 5578 times. Download 968 times.
Department	Electro-Optical Engineering
Year	2010
Semester	2
Degree	Master
Type of Document
Language	zh-TW.Big5 Chinese
Title	Semiconductor Laser using Sputtered SiO2 and Quantum Well Intermixing
Date of Defense	2011-07-11
Page Count	66
Keyword	quantum well intermixing(QWI) bandgap thermal expansion coefficient stress impurity free vacancy diffusion(IFVD)
Abstract	In this work , impurity free vacancy diffusion (IFVD) quantum well intermixing(QWI) technology by high thermal-expansion-induced stress is used to perform bandgap engineering. In this paper, 1530nm InGaAsP multiple QWs sandwiched by p-InP (2μm thickeneess, top) and n-InP (bottom) material is used as testing material structure also laser fabrication material, where contact materials (InGaAs and InP) on p-InP are used for comparison. By the difference between thermal expansion coefficients of SiO2 on the different material (InGaAs, InP), large different behaviors of QWI are observed, while low different dependence on defects created by ion-implantation is found. Above 70nm photo luminance (PL) wavelength shift of InGaAsP MQW below 2μm thick InP is realized in this method. Further more, CW in-plane laser structures are also successfully fabricated and demonstrated by such QWI, giving the same shift as PL. It shows that good qualify of material can be obtained in such QWI method. Using local deposition of SiO2 causes different bandgap materials, re-growth free processing for monolithic integration can be expected, offering a powerful scheme of QWI for bandgap engineering.
Advisory Committee	Ann-Kuo Chu - chair Chin-Ping Yu - co-chair Chao-Kuei Lee - co-chair Yi-Jen Chiu - advisor
Files	etd-0824111-010812.pdf Indicate in-campus at 5 year and off-campus access at 5 year.
Date of Submission	2011-08-24

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