Title page for etd-0814117-011126


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URN etd-0814117-011126
Author Shih-Wei Nieh
Author's Email Address No Public.
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Department Physics
Year 2016
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study of Growth Behavior and Electronic Properties for Co on Bi honeycomb
Date of Defense 2017-05-12
Page Count 71
Keyword
  • Bi
  • Topological insulator
  • Scanning tunneling microscope
  • Co
  • Honeycomb
  • Abstract Topological Insulator (TI) is popular research topic in recent years and Bismuth is always a perfect candidate for the experiments in TI. In fact, Bi honeycomb growing on Si substrate has been successfully created in the experiment and predicted as a 2D TI. To check whether this system is a 2D TI and understand the affection of magnetism, we decided to deposit small among of Cobalt on it and study the physical properties changing. By Low energy electron diffraction (LEED) we are able to see the variation of the lattice of the surfaces. Using scanning tunneling microscope (STM) and scanning tunneling spectroscopy (STS) we get to know the growth behavior of Co on Bi honeycomb and detect the surface electronic property to investigate the differences before and after the Co deposition.
    Advisory Committee
  • Yi-Ying Lu - chair
  • Chii-Bin Wu - co-chair
  • Chien-Cheng Kuo - advisor
  • Files
  • etd-0814117-011126.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2017-09-14

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