Title page for etd-0813117-224059


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URN etd-0813117-224059
Author Chun-Yuan Teng
Author's Email Address No Public.
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Department Physics
Year 2016
Semester 2
Degree Master
Type of Document
Language English
Title In2O3/ZnO Superlattice Epitaxial Thin Films: Growth by Sputtering Deposition and Characterizations of Physical Properties
Date of Defense 2017-07-20
Page Count 32
Keyword
  • ZnO
  • Epitaxy
  • Sputtering
  • Superlattice
  • In2O3
  • Abstract Superlattices of shallow quantum well structures with alternating layers of In2O3 and ZnO have been prepared by sputtering at 923K on c-sapphire substrates. Optimization of the processing parameters was attempted through varying the sputtering power, deposition temperature, and number of periods. X-ray reflectivity (XRR) assisted with analytical data fittings was used to extract the thickness, density, and roughness of the samples, while X-ray diffraction (XRD), Grazing Incidence X-ray Diffraction (GIXRD), and phi scans were adopted to verify their epitaxy. The epitaxial qualities for the samples with In2O3 as a starting layer are superior to those starting with ZnO based on transmission electron microscopy (TEM) atomic imaging and electron diffraction.
    Advisory Committee
  • Chih-Hsiung Liao - chair
  • Ikai Lo - co-chair
  • Sung-Wei Yeh - co-chair
  • Yung-Sung Chen - advisor
  • Files
  • etd-0813117-224059.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2017-09-14

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