Title page for etd-0812117-202710


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URN etd-0812117-202710
Author Yan-Ting Lin
Author's Email Address d993010014@student.nsysu.edu.tw
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Department Electrical Engineering
Year 2016
Semester 2
Degree Ph.D.
Type of Document
Language zh-TW.Big5 Chinese
Title Linearity analysis for SiGe HBTs in the avalanche region at different temperatures through Volterra-series
Date of Defense 2017-06-20
Page Count 100
Keyword
  • impact ionization
  • B-C junction
  • Volterra series
  • linearity
  • avalanche breakdown
  • SiGe HBT
  • power amplifier
  • Abstract The linearity for SiGe HBTs at different temperatures is analyzed by the Volterra
    series approach with a modified small-signal equivalent circuit to characterize the
    avalanche breakdown mechanism. A physical model based on the avalanche delay
    induced inductive breakdown network is introduced to modify the equivalent circuit
    in the B-C junction. The good agreement between the measured S-parameters in the
    avalanche regime and the modified model including gm2, Rjc and Ljc is achieved. The
    increment of the linearity with increasing the VCB is significant due to cancellation
    mechanism between the breakdown inductive and capacitive nonlinear contributions.
    Due to the high temperature induced decrement of nonlinear contribution distortion,
    the output power shows significant linearity improvement with increment of
    temperature. However, output power, gain, and PAE are slightly degraded at high
    temperatures. This investigation can be applied for power amplifier design in the
    avalanche regime by operating at high temperature for high linearity.
    Advisory Committee
  • Tzyy-Sheng Horng - chair
  • Chin-Chun Meng - co-chair
  • Hwann-Kaeo Chiou - co-chair
  • Chih-Wen Kuo - co-chair
  • Chien-Chang Huang - co-chair
  • Chie-In Lee - advisor
  • Files
  • etd-0812117-202710新.pdf
  • Indicate in-campus at 0 year and off-campus access at 5 year.
    Date of Submission 2017-09-12

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