Title page for etd-0812117-013007


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URN etd-0812117-013007
Author Chiao-han Lee
Author's Email Address No Public.
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Department Physics
Year 2016
Semester 2
Degree Master
Type of Document
Language English
Title Germanium Thin Films on Highly-Resistive Silicon Substrates by e-Beam Deposition and Study of their Magneto-transport Behaviors
Date of Defense 2017-07-20
Page Count 28
Keyword
  • GIXRD
  • TEM
  • 2D material
  • Si1-xGex thin film
  • XRR
  • XRD
  • Abstract In this work, we deposited germanium on high-resistivity silicon substrates by E-beam evaporation, and by annealing different temperature understanding the crystalline phase of thin film. X-ray reflectivity (XRR) data were analyzed with a four-layer model to obtain the thickness, roughness and mass density. The comparison was then made with XRD scans, GIXRD scans and direct TEM imaging. The electrical properties according to the RT curves demonstrate semiconducting behaviors, as judged by their negative temperature coefficients, fit well with a functional of quad-energy Arrhenius relation representative of band conduction mechanisms. Two-dimensional behavior showed at 300K magneto-resistivity of the sample annealed to 700˚C which can modeled by weak localization.
    Advisory Committee
  • I-kai Lo - chair
  • Sung-Wei Yeh - co-chair
  • Yung-Sung Chen - advisor
  • Files
  • etd-0812117-013007.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2017-09-14

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