Title page for etd-0812114-120402


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URN etd-0812114-120402
Author Wen-yen Lin
Author's Email Address No Public.
Statistics This thesis had been viewed 5384 times. Download 446 times.
Department Physics
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Effects of thermal annealing on the structure, morphology, and electrical properties of n-ZnO/i- Al 2 O 3 /p-Si pin diodes
Date of Defense 2014-07-24
Page Count 68
Keyword
  • thermal annealing
  • pin diode
  • Al2O3
  • ZnO
  • rf-sputtering
  • Abstract This thesis investigates the pin diodes which were fabricated with n-type ZnO thin
    films on p-type Si by rf-sputtering, using Al 2 O 3 as an insulated buffer layer. A pure Al
    layer was first deposited on bare Si substrate, which was then annealed in O 2 ambient,
    all meant to reduce the native SiO 2 into Si and have Al 2 O 3 formed as a crystalline layer
    for high quality ZnO growth. Different sputtering powers for the ZnO meant to search
    the best deposition rate. Different growth temperatures for the ZnO meant to improve
    the crystal structure and quality. Different annealing temperatures for the ZnO resulted
    in different grain sizes. With larger grains, the leakage current was lowered, suggesting
    that grain boundaries are responsible for the leakage current. In-plane XRD, pole
    figures, and GIXRD were used to exam the crystal structure and quality. SEM was used
    to observe the surface morphology. TEM was used to observe the crystal micro-
    structure. The results of PL data with multi-peak analysis give the band gap, defect
    density, and structure of near-band edge. Through comparisons of leakage current and
    energy band structure, the electrical measurement can be used to analyze the
    characteristic of pin diode.
    Advisory Committee
  • Li-Wei Tu - chair
  • Zhi-xiong liao - co-chair
  • Den -Jun Jang - co-chair
  • Quark Chen - advisor
  • Files
  • etd-0812114-120402.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2014-09-12

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