|Author's Email Address
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|Type of Document
||The Ultrafast Time-resolved Photoluminescence Study of Si doped InN thin films|
|Date of Defense
Auger recombination rate
||This thesis doing time resolved photoluminescence to study lifetime of Indium Nitride(InN) and Silicon doping Indium Nitride(Si:InN) in different temperature by using upconversion. We compare with nonlinear crystal BBO and KTA. Then, we explain how to correct the cutting angle of the BBO crystal. Finally, we illustrate the method to replace BBO with KTA.|
In the beginning, we try to find the max intensity energy position of sample photoluminescence. We use our result to compare the result of reference, then we can check the optical properties of the samples are not change.
Next, we do the time resolved photoluminescence to get the lifetime of samples. We use exponential decay to fit the lifetime, but the fitting result show two decay time in high temperature. The other result show the decay time decrease with excitation intensity and temperature increase.
We check the result of reference to explain the phenomenon which we get from experiment. Because of SRH decay rate and Auger decay rate will be increase in high temperature. That is the reason why decay time be short and get two decay time by fitting sample lifetime and decay time decrease with excitation intensity and temperature increase. By the way, the decay time between the different sample can be used the carrier density to explain.
||Li-Wei Tu - chair|
Tsu-Chiang Yen - co-chair
Meng-En Lee - co-chair
Den -Jun Jang - advisor
Indicate in-campus at 99 year and off-campus access at 99 year.|
|Date of Submission