Title page for etd-0812113-144754


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URN etd-0812113-144754
Author Yu-Ju Lee
Author's Email Address No Public.
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Department Physics
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The physical properties of chromium-doped indium oxide thin films
Date of Defense 2013-07-30
Page Count 97
Keyword
  • spin
  • RKKY
  • CIO
  • XRD
  • ITO
  • Abstract Diluted magnetic oxides (DMO) are one of the new materials for the new generation spintronic devices. In2O3 series materials are the most used one in transparent conducting devices and can be stabilized in amorphous, nano-crystalline and single crystalline, have great potential application in the future. However, comparison with other DMOs, such as ZnO and GaMnAs, research in In2O3 DMO is rare. This study aims at the physical properties of the pure In2O3 and ITO by doping of Co.
    It is found that films grown on Si substrates exhibit poor crystalline structure than those on Al2O3, such that has weaker ferromagnetic coupling. A clear resistance transition at high temperature is observed while only a simple semiconducting like resistance curve, as expectation, is found for films grown on Al2O3. For Cr doped In2O3 samples, ferromagnetic coupling is proportional to Cr dopants. However, the mechanism for this coupling is still unknown. For Cr doped ITO samples, due to the degenerate conduction band, the magnetic moment of Cr is highly possible mediated by RKKY mechanism. This study has discovered a few properties of In2O3 series diluted magnetic oxides. Because of these materials exhibits high stability in film growth and to environment, their future application can be realized if more research can be employed.
    Advisory Committee
  • Shih-Jye Sun - chair
  • Chun-Yu Hsu - co-chair
  • Hsiung Chou - advisor
  • Files
  • etd-0812113-144754.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2013-09-12

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