Title page for etd-0812113-141426


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URN etd-0812113-141426
Author Bo-Siang Yang
Author's Email Address No Public.
Statistics This thesis had been viewed 5348 times. Download 78 times.
Department Electrical Engineering
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Large Signal Model Establishment of Metal-oxide Semiconductor Field-effect Transistors
Date of Defense 2013-07-23
Page Count 52
Keyword
  • large signal model
  • Volterra series
  • nonlinearity
  • breakdown
  • MOSFET
  • Abstract The reduction of intermodulation distortion (IMD) due to inductive behavior for the radio frequency (RF) metal-oxide-semiconductor field-effect transistors (MOSFETs) is explored using Volterra series based on the nonlinear model incorporating the physical inductive breakdown network for the first time. For faster operation and to improve significantly the characteristic, the CMOS technology is continuously scaled down. The shorter channel length enhances the higher electric field effects, and thus results in breakdown easily. Therefore, the breakdown mechanism is more significant for accurate device characterization.
      From our analysis of the large signal model, the calculated total magnitude of the high order nonlinearities is lower when the breakdown inductance occurs. It has been proved that the cancellation between nonlinear transconductance and reactive nonlinearity from inductance. Which the higher input third-order intercept point (IIP3) is obtained at the biases where the breakdown inductance nonlinearity dominates. Therefore, the inductive behavior due to avalanche delay can be beneficial to the CMOS power amplifier (PA) when operating near the breakdown region.
    Advisory Committee
  • Ye-De Jiang - chair
  • Guan Hong - co-chair
  • Chie-In Lee - advisor
  • Files
  • etd-0812113-141426.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2013-09-12

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