Title page for etd-0812108-141338


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URN etd-0812108-141338
Author Chun-Wei Chia
Author's Email Address No Public.
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Department Electrical Engineering
Year 2007
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Water-assisted Liquid Phase Deposited Fluorinated Silicon Oxide on Amorphous Silicon
Date of Defense 2008-07-18
Page Count 112
Keyword
  • Amorphous silicon
  • Fluorinated Silicon Oxide
  • Silicon oxide
  • LPD
  • Abstract In this study, SiO2-xFx films were deposited on Si and amorphous silicon, their physical and chemical properties were measured. An Al/ SiO2-xFx /Si and Al/ SiO2-xFx/a-Si/Si MOS structures were used for the electrical measurements. To improve the electrical properties, we investigated the characteristics of SiO2-xFx films after annealing in nitrogen and oxygen ambient.
    We can find the leakage current density can be reduced to about 1.09× 10-6 A/cm2 and 1.03× 10-7 at -1 MV/cm and at 1 MV/cm after annealing in oxygen ambient. Although the leakage current is improved one order but the dielectric constant is increase.
    Advisory Committee
  • Gong Jeng - chair
  • Wen-Tai Lin - co-chair
  • Ying-Lang Wang - co-chair
  • Ikai Lo - co-chair
  • Ming-Kwei Lee - advisor
  • Files
  • etd-0812108-141338.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2008-08-12

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