Title page for etd-0811117-134325


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URN etd-0811117-134325
Author Zhe-Zhi Guo
Author's Email Address No Public.
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Department Communications Engineering
Year 2016
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Large-signal reliability of pHEMT power amplifier
Date of Defense 2017-06-20
Page Count 55
Keyword
  • X-parameter
  • stress
  • power amplifier
  • pHEMT
  • RF
  • Abstract Power amplifier and pHEMT are measured to extract the X-parameters from PNA-X. The X-parameters model is used to simulate and the practical of the model could be validated.   Under large signal stress measurement in pHEMT and power amplifier, observe the variation of waveform and current.
    The thesis propose to design the power amplifier by X parameter model, and then compare the circuit with simulation characteristic. The characteristics will be consistent, proving the applicability of the X parameter. The research observe the variation of component along with stress measurement on GaAs and GaN.
    Advisory Committee
  • Horng Tzyy-Sheng - chair
  • Meng, Chin-Chun - co-chair
  • Hwann-Kaeo Chiou - co-chair
  • Chien-Chang Huang - co-chair
  • Chie-In Lee - advisor
  • Files
  • etd-0811117-134325.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2017-09-11

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