Title page for etd-0811113-174759


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URN etd-0811113-174759
Author Zhi-Xuan Chen
Author's Email Address No Public.
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Department Physics
Year 2012
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study of optical properties of nonpolar GaN and nonpolar ZnO
Date of Defense 2013-07-30
Page Count 83
Keyword
  • Non-polar
  • Photoluminescence
  • M-Plane GaN
  • Negative thermal quenching
  • Time-Resolved Photoluminescence
  • N/Ga ratio
  • N Plasma power
  • A-Plane ZnO
  • Abstract We use a Ti:sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties and carrier relaxation of Two-step M-Plane GaN epitaxial layers grown on LiAlO2(100) by plasma-assisted molecular-beam epitaxy and a A-Plane ZnO epitaxial layers grown on M-Plane Sapphire by plasma-assisted molecular-beam epitaxy.
    We change the temperature of the sample from 14 K to 300 K, the near-band-edge emission is red-shifted as temperature increase. We measured the samples of different N/Ga ratio and N plasma power. We found the defect peak will become obvious when the N/Ga ratio and N plasma power increases. Because N/Ga ratio is higher, the stacking faults will be more rich. Besides, we investigate the relationship between polarization of photoluminescence. We found the PL intensity would become stronger as the polarization of photoluminescence perpendicular to c-axis of sample. We found the lifetime of carrier recombination would increase as wavelength increase and temperature decrease.
    Advisory Committee
  • Li-Wei Tu - chair
  • Tsu-Chiang Yen - co-chair
  • Meng-en Lee - co-chair
  • Den -Jun Jang - advisor
  • Files
  • etd-0811113-174759.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2013-09-12

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