Title page for etd-0811111-161216


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URN etd-0811111-161216
Author Shih-chen Chiu
Author's Email Address No Public.
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Department Electrical Engineering
Year 2010
Semester 2
Degree Master
Type of Document
Language English
Title High Dielectric Constant Nickel-doped Titanium Oxide Films by Liquid Phase Deposition
Date of Defense 2011-07-22
Page Count 112
Keyword
  • MOS structure
  • Titanium dioxide
  • liquid phase deposition
  • high dielectric constant
  • Nickel-doped
  • Abstract In this study, the characteristics of Nickel-doped LPD-TiO2 films on silicon substrate were investigated. In our experiment, we do some measurement about physical, chemical and electrical properties for undoped and Nickel-doped LPD-TiO2 films and discussed with them. The TiO2 film thickness was characterized by field emission scanning electron microscopy ( FE-SEM ), structure was characterized by X-ray diffraction (XRD), chemical properties was characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and electrical properties was characterized by leakage current: current-voltage (B1500A) and dielectric constant: capacitance-voltage (4980A). For the electrical property improvements, we investigated the Ni-doped LPD-TiO2 films by the post-anneal treatments in nitrogen, oxygen and nitrous oxide ambient.
    For nickel doping, the nickel chloride was used as the doping solution and the electrical characteristics were improved. After thermal annealing in nitrous oxide at 700 oC, the dielectric constant of polycrystalline titanium oxide film is 29 and can be improved to 94 with nickel doping.
    Advisory Committee
  • Kuo-mei Chen - chair
  • Chung-cheng Chang - co-chair
  • Yu-hao Yang - co-chair
  • Jeng Gong - co-chair
  • Ming-kwei Lee - advisor
  • Files
  • etd-0811111-161216.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2011-08-11

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