Title page for etd-0810109-154308


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URN etd-0810109-154308
Author Shiang-Shi Kang
Author's Email Address No Public.
Statistics This thesis had been viewed 5342 times. Download 5408 times.
Department Electrical Engineering
Year 2007
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title A Novel Self-aligned TFT with Source/Drain tie and Discontinuous Block Oxide Layer for Suppressing Self-heating Effect and Floating Body Effect
Date of Defense 2009-06-26
Page Count 91
Keyword
  • self-heating effect
  • SOI
  • Floating body effect
  • Abstract In this paper, we propose a novel thin film MOSFET with source/drain tie and discontinuously block oxide layers. Improving process is very important, when the gate length of SOI MOSFET is reduced. To overcome the misalignment problem, we use self-aligned technology to fabricate this device. In addition, the device has discontinuously block oxide layers; they can improve short channel effects, reduce the parasitic capacitance, and decrease the leakage current cause by P-N junction between source/drain and body regions. They also supply two pass ways to eliminate carriers and heat which generated by impact ionization resulting in suppression of floating-body effect and self-heating effect. In addition, these two pass ways can be seen as the parallel equivalent resistance results in a reduced series resistance and an increased drain saturation current. According to the ISE TCAD 10.0 simulation results, the discontinuously block oxide layers can not only improve the short channel effects, but also eliminate the floating-body effect and diminish the self-heating effect because of the pass ways.
    Advisory Committee
  • James B. Kuo - chair
  • Chun-Hsing shih - co-chair
  • Wen-Kuan Yeh - co-chair
  • Yao-Tsung Tsai - co-chair
  • Jyi-Tsong Lin - advisor
  • Files
  • etd-0810109-154308.pdf
  • indicate accessible in a year
    Date of Submission 2009-08-10

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