Title page for etd-0809115-142718


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URN etd-0809115-142718
Author Fu-peng Lu
Author's Email Address No Public.
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Department Physics
Year 2015
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells
Date of Defense 2015-08-31
Page Count 61
Keyword
  • nanorods
  • PA-MBE
  • p-i-n structure
  • nanostructure
  • InGaN solar cells
  • Abstract The p-i-n nanorods structure was grown on silicon (111) substrates by plasma-assisted molecular beam epitaxy. The morphology result was obtained by scanning electron microscopy including the height and the diameter. The indium content was estimated by high-resolution x-ray diffraction. Transmission electron microscopy was used to confirm that there are no treading dislocations in the nanorods. Finally, p-i-n nanorods structures were fabricated by photolithography. The device was completed with transparent conductive layer and positive and negative contacts through e-beam evaporator. J-V measurements under 1 sun and AM1.5G yielded energy conversion efficiency, open-circuit voltage, short-circuit current density, and fill factor. External quantum efficiency measurement was used to study the photo-electrical transfer efficiency.
    Advisory Committee
  • Chao-Kuei Lee - chair
  • Den -Jun Jang - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0809115-142718.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2015-09-10

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