URN |
etd-0809115-142718 |
Author |
Fu-peng Lu |
Author's Email Address |
No Public. |
Statistics |
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Department |
Physics |
Year |
2015 |
Semester |
1 |
Degree |
Master |
Type of Document |
|
Language |
zh-TW.Big5 Chinese |
Title |
Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells |
Date of Defense |
2015-08-31 |
Page Count |
61 |
Keyword |
nanorods
PA-MBE
p-i-n structure
nanostructure
InGaN solar cells
|
Abstract |
The p-i-n nanorods structure was grown on silicon (111) substrates by plasma-assisted molecular beam epitaxy. The morphology result was obtained by scanning electron microscopy including the height and the diameter. The indium content was estimated by high-resolution x-ray diffraction. Transmission electron microscopy was used to confirm that there are no treading dislocations in the nanorods. Finally, p-i-n nanorods structures were fabricated by photolithography. The device was completed with transparent conductive layer and positive and negative contacts through e-beam evaporator. J-V measurements under 1 sun and AM1.5G yielded energy conversion efficiency, open-circuit voltage, short-circuit current density, and fill factor. External quantum efficiency measurement was used to study the photo-electrical transfer efficiency. |
Advisory Committee |
Chao-Kuei Lee - chair
Den -Jun Jang - co-chair
Li-Wei Tu - advisor
|
Files |
Indicate in-campus at 99 year and off-campus access at 99 year. |
Date of Submission |
2015-09-10 |