Title page for etd-0809115-042452


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URN etd-0809115-042452
Author Yu-Fang Fan
Author's Email Address No Public.
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Department Physics
Year 2015
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Argon assisted epitaxial growth of graphene on polycrystalline Cu foil by atmospheric pressure chemical vapor deposition and its electrical properties
Date of Defense 2015-08-18
Page Count 92
Keyword
  • Graphene
  • APCVD
  • Schottky diode
  • Abstract Abstract:
    Graphene, an allotrope of carbon, built from monolayer sp2-bonded carbon atoms as a honeycomb crystal lattice. Since graphene was reported in 2004 from University of Manchester, it has been attracting increasing interest because of its unique physical properties, such as 15000 cm2/V·s high mobility1 and about 98% transmission of single layer graphene. This study reports a type of using atmospheric pressure chemical vapor deposition (APCVD) to synthesis graphene. And add argon to be the carrier gas observed how different with no carrier gas at Raman data, optic and it quality. Used different method to doping graphene, that its change be n or p type. Measure its electrical properties. Transfer graphene to n or p type silicon be Graphene-Silicon Schottky Diodes and measured its I-V curve then fitting ideality factor of Graphene-Silicon Schottky Diodes.
    Keyword:Graphene, APCVD, Schottky diode
    Advisory Committee
  • Den -Jun Jang - chair
  • Chao-Kuei Lee - co-chair
  • Shiu-Ming Huang - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0809115-042452.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2015-09-09

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