Title page for etd-0809111-152441


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URN etd-0809111-152441
Author Tsung-Yi Chou
Author's Email Address n110704@gmail.com
Statistics This thesis had been viewed 5353 times. Download 234 times.
Department Physics
Year 2010
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication and Analysis of m-InGaN Light-Emitting-Diodes
Date of Defense 2011-07-04
Page Count 92
Keyword
  • light emitting diodes
  • GaN
  • nonpolar
  • m-plane sapphire
  • Abstract Pure m-plane p-GaN/InGaN/n-GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) had been achieved. V/III ratio of the first layer m-plane GaN is 20 and growth temperature is 665 °C. Ⅴ/Ⅲ ratio and the growth temperature are the most important factors in the growth sequence. M-InGaN film with better crystal quality was grown successfully by tuning these two factors. We have obtained a narrow window for epitaxial growth of m-plane InGaN/GaN on m-sapphire at 450 °C. The striated surface is along (1120) a-axis direction of m-InGaN epilayer. As the growth temperature is increased further to 550 °C, there is no InGaN signal from x-ray diffraction (XRD). We study the effect of growth condition on the structural properties and morphology of these films using high-resolution x-ray diffractometer (XRD) and scanning electron microscopy (SEM)
    Advisory Committee
  • Quark Chen - chair
  • Wang-Chuang Kuo - co-chair
  • Der-Jun Jang - co-chair
  • Shih-Wei Feng - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0809111-152441.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2011-08-09

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