Title page for etd-0806110-143433


[Back to Results | New Search]

URN etd-0806110-143433
Author Ting-Yu Chen
Author's Email Address sendtony6@hotmail.com
Statistics This thesis had been viewed 5350 times. Download 2346 times.
Department Materials and Optoelectronic Science
Year 2009
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Defect Chemistry and Microstructure of SrTiO3
Date of Defense 2010-07-27
Page Count 107
Keyword
  • Nb2O5
  • TEM
  • SEM
  • XRD
  • SrTiO3
  • Abstract Abstract SrTiO3 is cubic at room temperature, and retains cubic until the phase transition to tetragonal at 105K (-168oC). It is a wide-band-gap semiconductor having an energy gap Eg ≈ 3.0 eV, when its semiconductivity is greatly improved by doping with donor oxides, e.g.Nb2O5 or heat treatment in low oxygen partial pressures (Po2). Donor oxides in solid solution with SrTiO3 forming substitutional defects create electron or cation vacancies as the principal charge compensation defect. In-gap levels are also modified by the oxygen partial pressure (Po2) adopted in sintering, which generates oxygen vacancies in order to maintain the overall charge neutrality in the ceramic. In this research, donor-doping and Po2 used in sintering are investigated for the in-gap-level modification using the cathodoluminescence (CL) spectrometry equipped with a scanning electron microscope (SEM). Other analytical techniques, e.g. transmission electron microscopy (TEM) will be used for characterizing the defect structure. Preliminary results suggest that the in-gap levels are registered at 3.10 eV and 2.69 eV, representing the intrinsic Eg and a donor-level created by oxygen vacancies, respectively.
    Advisory Committee
  • Bing-Hwai Hwang - chair
  • Wei-Lin Wang - co-chair
  • Hong-Yang Lu - advisor
  • Files
  • etd-0806110-143433.pdf
  • indicate accessible in a year
    Date of Submission 2010-08-06

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys