Title page for etd-0805110-191827


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URN etd-0805110-191827
Author Yen-Liang Chen
Author's Email Address No Public.
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Department Physics
Year 2009
Semester 2
Degree Ph.D.
Type of Document
Language English
Title The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy
Date of Defense 2010-06-29
Page Count 75
Keyword
  • nano wire
  • high mobility
  • MBE
  • GaN
  • AlGaN
  • Abstract The quality of GaN template layer plays a very important role in high electron mobility transistors. We proposed a special method in the growth of molecular beam epitaxy to deal with the dilemma between structure and the morphology of GaN. In our study, we used a nitrogen-rich GaN growth condition to deposit the initial varied layer. After that, we changed the N/Ga ratio stepwise to the growth condition of gallium-rich GaN and grew the epitaxy layer right away. In X-ray diffraction analysis, the full width at half-maximum (FWHM) value of rocking curves of GaN(002) was improved relatively to gallium-rich sample from 531.69 arcsecond to 59.43 arcsecond. In atomic force microscopy (AFM) analysis, the root mean square (rms) roughness of sample surface was improved relatively to nitrogen-rich sample from 18.28 nm to 1.62 nm over 5 μm × 5 μm area. The Raman scattering shows there is a slightly tilted plane in gradient layer and the gradient layer can also slash the strain force which is caused from Ga-rich GaN epitaxy layer and AlN buffer layer.
    A series high mobility AlxGa1-xN/GaN heterostructures samples were grown on MOVPE-grown GaN templates substrate by molecular beam epitaxy with different Al concentrations (x = 0.017~0.355). The quality checked by XRD and AFM indicated that the excellent properties agreed with the GaN-template. The highest mobility in this series samples at 8 K is 19593 cm2/Vs with carrier concentration 3.13 × 1012 cm-2 and Al concentration x = 0.017. In our experiments, the carrier density decreases as Al concentration reduces. In the illuminated Hall measurement, there are only few electrons increased following blue LED illumination. It shows that there are only few deep level defects existing near the heterointerface. From temperature-depended Shubnikov-de Haas (SdH) oscillations, the electron effective mass m* in 2DEG are evaluated as 0.213 mo and  for x = 0.207 0.227 moand 0.136 respectively.
    The high mobility AlxGa1-xN/GaN was fabricated to a series of wires by focused ion beam (FIB) equipment, and the width of the active channel is ranged from 900 nm to 50 nm (900 nm, 500 nm, 300 nm, 200 nm, 100 nm, 80 nm and 50 nm) with the channel orientation in [11 0] direction. The largest spin-splitting energy in the series of wires is 2.14 meV. Due to larger spin-splitting energy and quasi-ballistic transportation, the 200 nm wire is the best candidate to be the channel of the quantum-ring interferometer in our case.
    Advisory Committee
  • Wan-Sun Tse - chair
  • Ming-Kuei Lee - co-chair
  • Kuang-Yeu Hsieh - co-chair
  • Hsing-Lu Huang - co-chair
  • Ikai Lo - advisor
  • Files
  • etd-0805110-191827.pdf
  • indicate in-campus access immediately and off_campus access in a year
    Date of Submission 2010-08-05

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