||In the thesis, epitaxial ZnO films were grown by chemical vapor deposition method (CVD) on LiGaO2 (001) substrate. Zinc 2,4-pentanedionate monohydrate [Zn (C5H7O2) 2. H2O] , used as the zinc precursor, was vaporized at the temperature between 130 to 140℃. Then the vapor was carried by a mixture of N2/O2 gas flow into the furnace where the (001) LGO substrate located. The parameters of growth temperature, growth pressure and growth time were adjusted to found the best ZnO films growth conditions.|
After CVD growth, the crystal structure, crystal quality, surface morphology, optical properties, surface roughness and micro-structure properties of the specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), atomic force microscopy (AFM) and transmission electron microscopy (TEM).
This study was divided into three parts. In the first parts, the dependence of growth characteristics on the different growth temperatures was investigated. The best surface morphology and crystal quality of ZnO films were grown under the growth temperature of 550 ℃. In the second parts, the growth of ZnO films under various pressures was investigated. High orientation (0002)ZnO films were grown at lower growth pressure of 50 torr. In the third parts, the dependence of growth time on the ZnO films quality was investigated under growth temperature of 550 ℃and growth pressure of 50 torr.