Title page for etd-0804111-153214


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URN etd-0804111-153214
Author Yuan-shao Lin
Author's Email Address No Public.
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Department Materials and Optoelectronic Science
Year 2010
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Growth of (0002) InN Films on (001)LiGaO2 substrate by chemical vapor deposition method
Date of Defense 2011-07-18
Page Count 58
Keyword
  • LiGaO2
  • indium chloride
  • metallic indium
  • CVD
  • InN
  • Abstract This article aims at growing (0002) InN film on LiGaO2 substrate by chemical vapor deposition (CVD). High purity InCl3 and metallic indium were used to react with NH3 respectively to form InN.
    Different experimental condictions such as growth temperature and the reaction pressure were adopted and compared to grow a well crystalline structure and smooth InN thin film. After one hour reaction, InN deposits on LiGaO2 substrate. X-ray diffraction, scanning electron microscope, atomic force microscope, photoluminescence, and transmission electron microscope of the samples were measured to investigate the crystal orientation, crystal quality, surface morphology, and microstructure. Based on the result, we can get the best condiction to grow the InN thin film.
    Through the experimental results, it is found that InN can not be successfully grown by using metallic indium. Oppositely, it is not difficulty to form InN by using InCl3. After a series of attempts on experiments, the temperature of 600 ℃ and the pressure of 400 torr are found to be the best condiction to grow the InN thin films.
    Advisory Committee
  • Gan-de Shin - chair
  • Ji-jen Wu - co-chair
  • Liu-wen Chang - co-chair
  • Ming-chi Chou - advisor
  • Files
  • etd-0804111-153214.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2011-08-04

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