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URN etd-0803118-064145
Author Hao-Chun Chen
Author's Email Address nick19900628@gmail.com
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Department Materials and Optoelectronic Science
Year 2017
Semester 2
Degree Ph.D.
Type of Document
Language English
Title Mechanical Behavior and Size Effect of Zinc Oxide under Nano-Scale Tension Test
Date of Defense 2018-07-24
Page Count 155
Keyword
  • ZnO
  • nano-tension
  • Sample size effect
  • microcompression
  • deformation mechenism
  • Abstract Over recent years, one of important issues in nanotechnology and semiconductors science is the size effect of the materials. Many reports indicate that, nano-scaled materials have unique properties compared to micro- and macro-scaled materials. The size effect is not only applied for nanocrystalline materials but also for nano-structured materials. The nano-structured materials include nanowires, nanorods, nanopartical and appearance in nano-scale. From the research of Uchic et al., if the sample size decreases to nano-scale, the mechanical behaviors will increase.
    In this study, the mechanical properties and deformation behaviors of ZnO single crystal on polar/nonpolar plane have been examined. The yield strength readings of the near 100 nm scaled nano-tension tests on the c, a and m plane ZnO single crystals are 8.5, 7.6 and 3.8 GPa, respectively. And there are four kinds of sample size designs for nano-tension from 100 nm scale to 400 nm scale. Besides the micro-compression tests are conducted for comparing the yield strengths with the results of the nano-tension tests. And the readings are 3.0, 0.8 and 0.5 GPa for c, a and m plane ZnO. Compared with compression and tension results, the size effect and the deformation mechanism can be reconfirmed. The deformed microstructure will be identified by using various techniques, including, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and electron backscattered diffraction (EBSD). Taking all considerations for the higher Schmid factor and lower Burger’s vector, the most possible slip system should be 〈01-10〉{2-1-10} for c plane ZnO, and 〈-1011〉{10-11} for a and m plane
    Advisory Committee
  • Sheng-Rui Jian - chair
  • Che-Hsin Lin - co-chair
  • Hsuan-Kai Lin - co-chair
  • Cheng-Tang Pan - co-chair
  • Jacob Chih-Ching Huang - advisor
  • Files
  • etd-0803118-064145.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2018-09-03

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