Title page for etd-0803111-161019


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URN etd-0803111-161019
Author Yi-Hsuan Fan
Author's Email Address No Public.
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Department Electrical Engineering
Year 2010
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Investigation of Short-Channel Behaviors and RF/analog Performance in a Novel Self-Aligned Dual-Channel
Source/Drain-Tied MOSFET
Date of Defense 2011-07-15
Page Count 70
Keyword
  • source/drain-tied
  • RF/analog
  • extremely thin (ET) body
  • dual-channel
  • self-aligned
  • Abstract In this thesis, a novel fully self-aligned bulk-Si device named dual-channel source/drain-tied (DC-SDT) MOSFET with extremely thin (ET) body is proposed. The process utilizes the multiple epitaxial growths of SiGe/Si layers, so the starting material is bulk-Si wafer instead of the SOI wafer. We have investigated the RF/analog performance, and the high temperature induced device stability degradation has also been also investigated. Moreover, we have compared this structure with the other similar transistors such as: body-tied MOSFET (DC-BT MOSFET) and conventional dual-channel MOSFET (DC-SOI MOSFET). Based on the simulation results, for the DC-BT MOSFET, our proposed DC-SDT MOSFET has improved the device performances such as: Ioff decreased 47.6%, switching speed increased 18.1%, S.S. improved 13%, and voltage gain increased 25%. Whereas for the DC-SOI MOSFET, our proposed DC-SDT MOSFET has also improved the device performances such as: Ion increased 11.3%, reduction of lattice temperature 35.7% and 35.5 in the top and bottom channels, voltage gain increased 15%. We not only compared with the above two similar transistors, but also compared to the other mainstream devices, such as: FinFET and Gate-all-around. After the comparisons, we confirm that the proposed DC-SDT MOSFET has better ON-state current and short-channel behaviors. For the scaling, DC-SDT MOSFET can truly become one of the strong candidates.
    Advisory Committee
  • Chee-Wee Liu - chair
  • Chun-Hsing Shih - co-chair
  • Te-Kuang Chiang - co-chair
  • Feng-Der Chin - co-chair
  • Jyi-Tsong Lin - advisor
  • Files
  • etd-0803111-161019.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2011-08-03

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