||The 1/4λ dual-mode resonators made from c-axis-oriented aluminum nitride films grown on different conduction material have been studied in this thesis. The RF/DC sputter system is used to grow on layers of reflector. During the porcess, 3.5 pairs of Bragg reflector alternating with W and SiO2 are composed by Si substractor. To achieve 0.999 reflective rate, fabrication parameters are adjusted to make W films become α-phase structurre. On the other hand, piezoelectric layers as well as reflective layers that using reactive RF magnetron sputtering system and means of off-axis are combined to deposite optimal resonators of shear mode quality factor (Q) resonatros. While changing the substract and target distance between various bottom electrode materials, including Si, W/Si, and Mo/Si could deposit AlN with various c-axis tilting angle which resulted in stimulating longitudinal and shear acoustic waves. Futhermore, the finding is used to discuss the growth mechanism of inclined AlN by TEM. |
The analysis of various distances of AlN films shows that column inclining angle and XRD-Rocking Curve ω will increase with distance. The quality of shear mode would be better when column and ω are highly shifed.
About the influence on AlN deposites, AlN/Si was grown away from the center by 6 cm. AlN/Si column inclining angle is about 20 degree, and RMS could reach 2.63nm beneath. Uner AlN/W/Si, column incling angle is about 30 degree, and ω shift angle 4.14 degree, the shear mode quality factor of freaquency response is obtained to 262. Under AlN/Mo/W/Si, column incling angle would be 25.4 degree, and XRD are better-choosed c-aixsm, ω tilting angle shifs 6.72 degree, and the shear mode quality factor is obtained to 290. Film intersurface appears bigger misfit by TEM to obtain better shear mode.