Title page for etd-0801114-202304


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URN etd-0801114-202304
Author Chi-hung Pan
Author's Email Address No Public.
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Department Physics
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Time-resolved photoluminescence study of ALD (atomic layer
deposited) annealed and unannealed m-plane ZnO thin films
Date of Defense 2014-07-31
Page Count 83
Keyword
  • Photoluminescence
  • m-Plane ZnO
  • Besal Stacking Fault
  • Atomic Layer Deposition
  • Time-Resolved Photoluminescence
  • Abstract We use a Ti:sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties and time-resolved PL (TRPL) of the m-plane ZnO. The sample we studied was made by ALD (Atomic Layer Deposition). One sample was made without annealing and the other one was annealed at 700oc (O2).
    We use Tripler system to get the 269 nm laser. It is good for simulating semiconductor. Then we get emission light from Triax 550. From low temperature PL spectral,we saw an big envelope from sample B (unannealed). Sample A (annealed) showed some stacking fault. From TRPL spectral measuring at 14K、50K、100K and 150K,we saw sample A’s life time was less then sample B in the range of 3.14 eV to 3.4 eV. It means that there is a great improvement for light’s emission after annealing.
    Advisory Committee
  • Li-Wei Tu - chair
  • Meng-en Lee - co-chair
  • Quark Chen - co-chair
  • Den -Jun Jang - advisor
  • Files
  • etd-0801114-202304.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2014-09-10

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