Title page for etd-0801114-163625


[Back to Results | New Search]

URN etd-0801114-163625
Author Ming-Feng Lee
Author's Email Address No Public.
Statistics This thesis had been viewed 5350 times. Download 1 times.
Department Materials and Optoelectronic Science
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Preparation of Cu2ZnSnS4thin films by sulfurization
Date of Defense 2014-06-26
Page Count 74
Keyword
  • rapid thermal processing
  • sulfurization
  • Cu2ZnSnS4
  • precursor
  • thin film solar cell
  • Abstract In this study, a sulfurization process was employed to synthesize Cu2ZnSnS4 (CZTS)
    thin films. The process was conducted by the deposition of elemental precursor layers
    with the stacking sequence of Zn/Sn/Cu by sputtering on soda glass (soda-lime glass SLG) substrate and followed by thermal annealing in an inert ambient to form the
    CZTS film. Both conventional and repaid thermal sulfurization with heating rate of 30℃/min and 5-25℃/sec had been used, respectively, to raise the temperature to 570℃.The duration for annealing was 30 minutes for conventional sulfurization and 1 minute for rapid thermal sulfurization. The samples were then cooled to room temperature with a supply of sulfur vapor until the temperature reached 300℃.Our experimental results on conventional sulfurization showed that single phase of CZTS could be prepared with the preset composition using the Zn/Sn ratio fixed at 1.2 and the Cu/(Zn+Sn) ratio kept between 0.6 and 0.9. The film resistivity was related to chemical composition and could be controlled between 0.2 and 800 Ω-cm. Optical bandgap of the films was measured to be about 1.5eV and optical absorptioncoefficients were determined to be 104~105cm-1.The film adhesion problem occurred for the films prepared by rapid thermal sulfurization and could be improved by using a heating rate below 5℃/sec. Single-phase CZTS films could be prepared with the preset composition of Zn/Sn = 1.2 and Cu/(Zn + Sn) = 0.75. Its resistivity was measured to be 3000Ω-cm. Optical transmission measurement of this film showed that the bandgap and optical absorption coefficients were 1.48 eV and 104~105cm-1, respectively.In order to improve grain structures and surface morphology of the films, a thin layer of Sb was added between Sn and Zn in the precursor for sulfurization. An Sb layer thickness of 100 nm was suitable for the above mentioned purposes but the reproducibility of this process was still a problem.To promote the formation of liquid phase during the sulfurization processes, Cu had been replaced with CuxSe as part of precursors. The result was not promising because CuxSe might be turned into CuxS and caused the film peeled off.
    Advisory Committee
  • Mau-Phon Houng - chair
  • Wei-Hung Su - co-chair
  • Bae-Heng Tseng - advisor
  • Files
  • etd-0801114-163625.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2014-09-01

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys