Title page for etd-0801100-153109


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URN etd-0801100-153109
Author Chien-An Chen
Author's Email Address m8736605@student.nsysu.edu.tw
Statistics This thesis had been viewed 5350 times. Download 13162 times.
Department Materials Science and Engineering
Year 1999
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title A Studey of Silicon Dioxide Deposited by Liquid Phase Deposition Method on CuInSe2 and CuGaSe2
Date of Defense 2000-07-28
Page Count 105
Keyword
  • CuInSe2
  • CuGaSe2
  • TEM
  • LPD
  • C-V
  • I-V
  • Abstract In this paper, we use a room temperature processing system, Liquid Phase Deposition(LPD) method, to grow silicon dioxide. The advantages are cheap equipment, low temperature growth, and no thermal stress. The quality is good enough to be used in IC devices. To inverstigate the properties of silicon Dioxide, we have done different physical and chemical test, including AES,TEM,FTIR,P-etch rate. We used the high frequency C-V curve to study the interface properties. The leakage current help to clarify the film quality. Moreover, we also discuss the growth mechanism in order to more understanding of LPD method.
    Advisory Committee
  • Huang, Huey-Liang - chair
  • Mau-Phon Houng - co-chair
  • Hsieh, K. Y. - co-chair
  • Bae-Heng Tseng - advisor
  • Files
  • home3.pdf
  • indicate access worldwide
    Date of Submission 2000-08-01

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