Title page for etd-0730118-122906


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URN etd-0730118-122906
Author Shi-Hao Jian
Author's Email Address No Public.
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Department Physics
Year 2017
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The Electronic Structures of Few-Layered InSe Studied by Scanning Tunneling Microscopy/Spectroscopy
Date of Defense 2018-06-22
Page Count 87
Keyword
  • Operational amplifier
  • Scanning tunneling microscope
  • Molecular manipulate
  • Van der walls materials
  • Graphite
  • STM parasitic capacitance
  • InSe
  • Abstract Direct-to-indirect band gap transition of few-layers InSe is a problem for
    optical measurements like Raman spectroscopy and photoluminescence spectroscopy
    (PL). To identify the properties of few layers InSe, we use scanning
    tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to probe
    the electronic properties of exfoliated InSe flake on graphite.
    We identify the thickness of InSe flakes can be lower than 15 nm. The structure
    of atomic accuracy is 3.841 A° and 8.01 A° correspond to the lattice constant
    and the thickness of single layer. However, the parasitic capacitance in STM system
    is a big problem for STS. We design a a external operational circuit to eliminate
    the signal of parasitic capacitance. By using STS, we measure the electronic
    structure from 4-10 ML InSe which conventional spectroscopy cannot reach. The
    results are very different from the theoretical calculation. It could due to the
    structure of InSe edge and the interation between InSe and HOPG. In the other
    hand, We can change the morphology of InSe edge by STM tip. It make us to get
    a new mether to prepare thinner InSe.
    Advisory Committee
  • Yi-Ying Lu - chair
  • Chii-Bin Wu - co-chair
  • Chien-Cheng Kuo - advisor
  • Files
  • etd-0730118-122906.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2018-08-30

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