Title page for etd-0728112-031923


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URN etd-0728112-031923
Author Shu-Ting Huang
Author's Email Address ciafbijack@yahoo.com.tw
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Department Electro-Optical Engineering
Year 2011
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Fabrication and characterization of high-speed through silicon via
Date of Defense 2012-07-26
Page Count 52
Keyword
  • s parameters
  • microwave loss
  • Through silicon via
  • Abstract The target of this thesis is to fabricate through Silicon via (TSV) structures based on Si-bench technology for high-speed transmission interface. In this process, Si via with a depth of 250 μm were formed by dry etching on a 500 μm thick <111> Si wafer. The TSV were then obtained by removing the bottom of the silicon wafer using grinding technique. To reduce microwave loss of high frequency signal transmission, we oxidized the TSV by oxygen wet oxidation at a temperature of 1000 oC. Finally, conductive paths through the TSV were formed by filling silver epoxy into the via and dry at a temperature of 200 oC for 1 hour. The s parameters of the high speed TSV structure was characterized by a Vector Network Analyzer. Si-bench technology can effectively improve system integration and performance while reducing cost and size of the module package.
    .
    Key words: Through silicon via, microwave loss, s parameters
    Advisory Committee
  • Ting-Chang Chuang - chair
  • Chao-Kuei Lee - co-chair
  • Yi-Jen Chiu - co-chair
  • Ann-Kuo Chu - advisor
  • Files
  • etd-0728112-031923.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2012-07-28

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