Title page for etd-0727118-230340


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URN etd-0727118-230340
Author Kai Chen
Author's Email Address No Public.
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Department Mechanical and Electro-Mechanical Engineering
Year 2018
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Development of the system for Determining the Thermal Expansion Coefficient of Thin Film
Date of Defense 2018-08-23
Page Count 76
Keyword
  • Test-key
  • pull-in voltage
  • empirical formula
  • coefficient of thermal expansion
  • Abstract The coefficient of thermal expansion (CTE) is the important thermal property that affects the performance of thin film components. Therefore, this study establishes a detection system for extracting the CTE which is using the electro-signal as the extracting method. The main advantage of the system is to take a fixed-fixed beam structure as the standard test-key and sequentially using the steady current to heat the test-key to perform thermal deformation and then measuring the pull-in voltage to extracting the CTE. Measuring the capacitance difference during the heating test-key process is also be done for obtaining the critical current (Icr) and the time (tst) required to reach the maximum capacitance difference, it can prevent the damage of the test-key before pull-in voltage measurement. Due to these results, the damage caused by overheating could be prevented before pull-in occurs. Finally, this study also defines the optimized experimental parameters for heating current and the range of heating time. Extracting result of the average value of the CTE of silicon is (2.58±0.04)×10-6 K-1 and only 0.77% error compared to the standard value (2.60×10-6 K-1)[1]. Therefore, the detection system can be practically applied to the production line in the future.
    Advisory Committee
  • David. T.W. Lin - chair
  • Ching-Liang Dai - co-chair
  • W.C. Lin - co-chair
  • Wan-Chun Chuang - advisor
  • Files
  • etd-0727118-230340.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2018-08-30

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