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URN etd-0727112-081448
Author Wei-Tsai Chang
Author's Email Address d963010006@gmail.com
Statistics This thesis had been viewed 5337 times. Download 0 times.
Department Electrical Engineering
Year 2011
Semester 2
Degree Ph.D.
Type of Document
Language English
Title Study of thin-film piezoelectric transducers for vibration-energy harvesting
Date of Defense 2012-07-17
Page Count 151
Keyword
  • AlN
  • piezoelectric transducer
  • vibration-energy
  • flexible substrate
  • ZnO
  • Abstract The piezoelectric transducer for vibration-energy harvesting is constructed of a piezoelectric layer, bottom electrode and a top electrode. In order to obtain an appropriate transducer for the low-frequency operating; environmentally-friendly and long-term, the flexible substrate, the piezoelectric layer, and the additional mass-loading (tip mass) have been investigated thoroughly. This study investigates the feasibility of a high-performance ZnO and AlN based piezoelectric transducer for vibration-energy harvesting applications.
    Firstly, the piezoelectric transducer is constructed of a Cu/ZnO/ITO/PET structure. Both scanning electron microscopy and X-ray diffraction indicate that, among the favorable characteristic of the ZnO piezoelectric film include a rigid surface structure and a high c-axis preferred orientation. Hence, an open circuit voltage of 1.87 V for the ZnO piezoelectric transducer at a vibration frequency of 100 Hz is obtained by an oscilloscope. After rectifying and filtering, the output power of the generator exhibits an available benefit of 0.07 μW/cm2 with the load resistance of 5 MΩ.
    Secondly, this investigation introduces novel means of integrating high-performance piezoelectric transducers using single-sided ZnO and AlN films with a flexible stainless steel substrate (SUS304). Hence, the SUS304 substrate exhibits the long-term stability under vibration. The single-sided ZnO and AlN transducers are deposited on the SUS304 substrate at a temperature of 300 oC by an RF magnetron sputtering system. Scanning electron microscopy and X-ray diffraction of piezoelectric films reveal a rigid surface structure and a high c-axis-preferred orientation. A mass loading at the front-end of the cantilever is critical to increase the amplitude of vibration and the power generated by the piezoelectric transducer. The open circuit voltage of the single-sided ZnO power generator is 10.5 V. After rectification and filtering through a capacitor with a capacitance of 33 nF, the output power of the single-sided ZnO generators exhibited a specific power output of 1.0 μW/cm2 with a load resistance of 5 MΩ.
    Finally, this investigation fabricates double-sided piezoelectric transducers for harvesting vibration-power. The double-sided piezoelectric transducer is constructed by depositing piezoelectric thin films on both the front and the back sides of SUS304 substrate. The titanium (Ti) and platinum (Pt) layers were deposited using a dual-gun DC sputtering system between the piezoelectric thin film and the back side of the SUS304 substrate. Scanning electron microscopy and X-ray diffraction of piezoelectric films reveal a rigid surface structure and highly c-axis-preferring orientation. The maximum open circuit voltage of the double-sided ZnO power transducer is approximately 18 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.3 μW/cm2 is obtained from the double-sided ZnO transducer with a load resistance of 6 MΩ. The variation of the power output of ±0.001% is obtained after 24-hour continuous test. The maximum open circuit voltage of the double-sided AlN power transducer is approximately 20 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.462 μW/cm2 is obtained from the double-sided AlN transducer with a load resistance of 7 MΩ.
    Advisory Committee
  • Jow-Lay Huang - chair
  • Meng-Chyi Wu - co-chair
  • Shoou-Jinn Chang - co-chair
  • Mau-Phon Houng - co-chair
  • Chih-Ming Wang - co-chair
  • Yeong-Her Wang - co-chair
  • Rurng-Sheng Guo - co-chair
  • Chien-Chuan Cheng - co-chair
  • Ying-Chung Chen - advisor
  • Files
  • etd-0727112-081448.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2012-07-27

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