Title page for etd-0727112-043304


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URN etd-0727112-043304
Author Jung-chin Po
Author's Email Address No Public.
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Department Electro-Optical Engineering
Year 2011
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Self-assembled nano metal processes for enhancing light extraction efficiency of GaN light-emitting diode
Date of Defense 2012-06-26
Page Count 52
Keyword
  • GaN
  • nanopillars
  • nanodots
  • self-assembled
  • light-emitting diode
  • Abstract  In this thesis, we use self-assembled nano metal particles as a dry etching mask to from nanopillars. The nanopillars integrated with traditional light-emitting diode (LED) p-type GaN surface is designed to increase the light extraction efficiency. The initial fabrication process adopted in this study is using 100nm SiO2 as thermal aggregation layer. The poor thermal conductivity of SiO2 material will help to accumulate heat on the surface. Then, 10nm Ni thin film is deposited on the SiO2, and rapid annealed at 900oC (working pressure of 1~3×10-6 Torr). The Ni nanospheres are prepared to integrate with LED chip processes.
     We use the etching times (pillar heights) as experimental parameters to study the degree of light extraction efficiency. Traditional right angle branch electrode samples of as grown, 20, 30, 40 sec etching time are analyzed by LI curve measurement. Under 20mA injection current, samples with 20, 30, 40 sec etching times have better light extraction than as grown, an increase of 6.54%, 3.27%, 1.63%, respectively. The experimental results reveal that self-assembled nano metal particles as a dry etching mask on the p-type GaN LED surface can increase the light extraction efficiency.
    Advisory Committee
  • Min-Hsiung Shih - chair
  • Chien-Chung Lin - co-chair
  • Jau-Sheng Wang - co-chair
  • Jui-Yang Feng - co-chair
  • Tsong-Sheng Lay - advisor
  • Files
  • etd-0727112-043304.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2012-07-27

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