Title page for etd-0726113-151242


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URN etd-0726113-151242
Author Mei-yu Wang
Author's Email Address No Public.
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Department Physics
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Characterization of InGaN/GaN quantum-well microdisks grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy
Date of Defense 2013-07-15
Page Count 60
Keyword
  • quantum well
  • LAO
  • microdisk
  • Abstract The characterization of InGaN/GaN quantum-well microdisks grown by plasma-assisted molecular beam epitaxy on γ-LiAlO2 substrate have been investigated with SEM and the spectra of PL and CL. We verified the emission wavelength and the quality with different growth conditions of the quantum-wells. First, we observed that the PL emission peaks will shift when quantum wells grow at different temperature, the higher growth temperature will cause blue-shift of emission peak. Moreover, we found that the photon energy of quantum wells will increase while we introduce the different growth temperature between InGaN and GaN barrier. Finally, we observed that the luminescence intensity is related to the number of quantum well layers, the more quantum well layers make the higher intensity.
    Advisory Committee
  • Mitch, Ming-Chi Chou - chair
  • Meng-En Lee - co-chair
  • Kuang - Yeu Hsieh - co-chair
  • IKai Lo - advisor
  • Files
  • etd-0726113-151242.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2013-08-26

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